Modeling simulation and noise analysis of novel dual channel algan gan high electron mobility transistors for high frequency and low power applications

Abstract

In the semiconductor, microelectronics, and IC production industries, silicon CMOS technology has emerged as one of the most prosperous and promising technologies over the past fifty years. To enhance performance and address the Short Channel Effect (SCE) issue, various semiconductor devices such as MOSFETs, HEMTs, FinFETs, TFETs, Nanosheet FETs, Nanowire FETs, and Carbon Nanotube FETs have been developed. However, in terms of circuit performance and suppression of the short channel effect, III-V-based High Electron Mobility Transistors (HEMTs) surpass all of these novel architectures. Due to these outstanding characteristics, HEMTs have become integral components of VLSI. Novel semiconductors can be discovered by combining materials from various groups and developing unique device architectures for ultra-high-speed applications. In the modern semiconductor industry, single substrate-connected HEMT devices have drawn a lot of attention as a potential alternative to conventional HEMTs due to their significantly improved electrical characteristics. The future is believed to belong to integrated devices on a single substrate because of their high drive current and strong resistance to short-channel effects. This serves as the motivation behind the research study. newline