Design and performance analysis of AlGaN GaN HEMT for pH sensing applications

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dc.contributor.guidePeriasamy, C
dc.coverage.spatial
dc.creator.researcherBhat, Asif Mohammad
dc.date.accessioned2024-07-25T11:43:19Z
dc.date.available2024-07-25T11:43:19Z
dc.date.awarded2023
dc.date.completed2023
dc.date.registered2018
dc.description.abstractnewline
dc.description.note
dc.format.accompanyingmaterialDVD
dc.format.dimensions
dc.format.extentxxv,125p
dc.identifier.urihttp://hdl.handle.net/10603/578778
dc.languageEnglish
dc.publisher.institutionDepartment of Electronics and Communication Engineering
dc.publisher.placeJaipur
dc.publisher.universityMalaviya National Institute of Technology Jaipur
dc.relation
dc.rightsuniversity
dc.source.universityUniversity
dc.subject.keywordBiosensors
dc.subject.keywordEngineering
dc.subject.keywordEngineering and Technology
dc.subject.keywordEngineering Electrical and Electronic
dc.subject.keywordGallium Nitride
dc.subject.keywordHigh Electron Mobility Transistor
dc.titleDesign and performance analysis of AlGaN GaN HEMT for pH sensing applications
dc.title.alternative
dc.type.degreePh.D.

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