DC and rf compact modeling of ldmos transistors  impact ionization conductivity modulation and self heating effect

dc.contributor.guide	Singh, Yogesh Chauhan
dc.coverage.spatial
dc.creator.researcher	Sharma, Ayushi
dc.date.accessioned	2025-11-04T09:48:07Z
dc.date.available	2025-11-04T09:48:07Z
dc.date.awarded	2025
dc.date.completed	2025
dc.date.registered	2019
dc.description.abstract	Abstract file attached separately
dc.description.note
dc.format.accompanyingmaterial	None
dc.format.dimensions
dc.format.extent	xxiii, 125p
dc.identifier.researcherid
dc.identifier.uri	http://hdl.handle.net/10603/671225
dc.language	English
dc.publisher.institution	ELECTRICAL ENGINEERING
dc.publisher.place	Kanpur
dc.publisher.university	Indian Institute of Technology Kanpur
dc.relation
dc.rights	university
dc.source.university	University
dc.subject.keyword	Engineering
dc.subject.keyword	Engineering and Technology
dc.subject.keyword	Engineering Electrical and Electronic
dc.title	DC and rf compact modeling of ldmos transistors impact ionization conductivity modulation and self heating effect
dc.title.alternative
dc.type.degree	Ph.D.