Moderate Temperature growth of Zn0 GaZn0 and MgZno Thin Film Transistor Device with Absence of self Heating effect Fabricated By Rf Magnetron Sputtering method

Abstract

Thin film transistor fabricated using undoped zinc oxide (ZnO) and doped zinc oxide as a semiconductor layer at moderate temperature has limitation of presence of self heating effect in channel layer. It causes severe current lag instead of channel saturation on applying high drain voltages and gate voltages. The causes for the self heating effect are poor crystallinity of polycrystalline ZnO film, intrinsic defects generation, low thermal conductivity of semiconductor material, interfacial trap and bulk trap densities, and presence of more grain boundaries. In order to overcome the above limitation, in the present study, a novel optimized condition of zinc oxide semiconductor films grown at temperature of 100°C by radio frequency (RF) magnetron sputtering method were obtained. newline