Investigation of Resistive Switching Characteristics of Metal Oxide Memory Devices

Abstract

Nonvolatile memory (NVM) technologies stand as fundamental pillars in the newlinerealm of modern electronics, ensuring the preservation of stored information without newlinethe continuous supply of power. The pursuit of an ideal NVM embodies a quest for a newlinetechnology characterized by a simple structure, high operational speed, affordability, newlinenondestructive readout, compact size, enduring performance, low operational newlinevoltage, and prolonged retention time. While an NVM possessing all these newlineproperties remains elusive, recent strides in resistive random-access memory newline(RRAM) technology, particularly those based on Hafnium oxide (HfO2) and newlineZirconium oxide (ZrO2), present promising avenues for meeting these demands. newlineThis thesis embarks on a comprehensive exploration of RRAM technology, newlinewhich holds immense potential in addressing the evolving landscape of electronic newlineapplications such as IoT, mobile computing etc. RRAM devices, with their inherent newlineadvantages of high speed, cost-effectiveness, scalability, and expanded storage newlinecapacity, emerge as compelling candidates for fulfilling the burgeoning requirements newlineof modern electronics. newlineThe thesis begins with an introductory overview of evolving memory newlinetechnologies, laying the foundation for a deeper dive into the intricacies of RRAM. newlineDiscussion encompasses the materials utilized in RRAM construction, methodologies newlinefor resistance manipulation, and critical output parameters governing device newlineperformance. Moreover, strategies aimed at augmenting the capabilities of HfO2 and newlineZrO2 -based RRAM devices are scrutinized, alongside an examination of associated newlinechallenges and prospective avenues for enhancement. newline